Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane

ABSTRACT

A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

TECHNICAL FIELD

[0001] The present invention relates to a carrier having a membrane forengaging microelectronic substrates during mechanical and/orchemical-mechanical planarization.

BACKGROUND OF THE INVENTION

[0002] Mechanical and chemical-mechanical planarizing processes(collectively “CMP”) are used in the manufacturing of microelectronicdevices for forming a flat surface on semiconductor wafers, fieldemission displays and many other microelectronic-device substrates andsubstrate assemblies. FIG. 1 schematically illustrates a CMP machine 10having a platen 20. The platen 20 supports a planarizing medium 40 thatcan include a polishing pad 41 having a planarizing surface 42 on whicha planarizing liquid 43 is disposed. The polishing pad 41 may be aconventional polishing pad made from a continuous phase matrix material(e.g., polyurethane), or it may be a new generation fixed-abrasivepolishing pad made from abrasive particles fixedly dispersed in asuspension medium. The planarizing liquid 43 may be a conventional CMPslurry with abrasive particles and chemicals that remove material fromthe wafer, or the planarizing liquid may be a planarizing solutionwithout abrasive particles. In most CMP applications, conventional CMPslurries are used on conventional polishing pads, and planarizingsolutions without abrasive particles are used on fixed abrasivepolishing pads.

[0003] The CMP machine 10 can also include an under-pad 25 attached toan upper surface 22 of the platen 20 and the lower surface of thepolishing pad 41. A drive assembly 26 rotates the platen 20 (asindicated by arrow A), and/or it reciprocates the platen 20 back andforth (as indicated by arrow B). Because the polishing pad 41 isattached to the under-pad 25, the polishing pad 41 moves with the platen20.

[0004] A wafer carrier 30 is positioned adjacent the polishing pad 41and has a lower surface 32 to which a substrate 12 may be attached viasuction. Alternatively, the substrate 12 may be attached to a resilientpad 34 positioned between the substrate 12 and the lower surface 32. Thewafer carrier 30 may be a weighted, free-floating wafer carrier, or anactuator assembly 33 may be attached to the wafer carrier to impartaxial and/or rotational motion (as indicated by arrows C and D,respectively).

[0005] To planarize the substrate 12 with the CMP machine 10, the wafercarrier 30 presses the substrate 12 face-downward against the polishingpad 41. While the face of the substrate 12 presses against the polishingpad 41, at least one of the platen 20 or the wafer carrier 30 movesrelative to the other to move the substrate 12 across the planarizingsurface 42. As the face of the substrate 12 moves across the planarizingsurface 42, material is continuously removed from the face of thesubstrate 12.

[0006] CMP processes should consistently and accurately produce auniformly planar surface on the substrate to enable precise fabricationof circuits and photo-patterns. During the fabrication of transistors,contacts, interconnects and other features, many substrates developlarge “step heights” that create a highly topographic surface across thesubstrate. Yet, as the density of integrated circuits increases, it isnecessary to have a planar substrate surface at several stages ofprocessing the substrate because non-uniform substrate surfacessignificantly increase the difficulty of forming sub-micron features.For example, it is difficult to accurately focus photo-patterns towithin tolerances approaching 0.1 μm on non-uniform substrate surfacesbecause sub-micron photolithographic equipment generally has a verylimited depth of field. Thus, CMP processes are often used to transforma topographical substrate surface into a highly uniform, planarsubstrate surface.

[0007] In the competitive semiconductor industry, it is also highlydesirable to have a high yield in CMP processes by producing a uniformlyplanar surface at a desired endpoint on a substrate as quickly aspossible. For example, when a conductive layer on a substrate isunder-planarized in the formation of contacts or interconnects, many ofthese components may not be electrically isolated from one anotherbecause undesirable portions of the conductive layer may remain on thesubstrate over a dielectric layer. Additionally, when a substrate isover-planarized, components below the desired endpoint may be damaged orcompletely destroyed. Thus, to provide a high yield of operablemicroelectronic devices, CMP processing should quickly remove materialuntil the desired endpoint is reached.

[0008] The planarity of the finished substrate and the yield of CMPprocessing is a function of several factors, one of which is the rate atwhich material is removed from the substrate (the “polishing rate”).Although it is desirable to have a high polishing rate to reduce theduration of each planarizing cycle, the polishing rate should be uniformacross the substrate to produce a uniformly planar surface. Thepolishing rate should also be consistent to accurately endpoint CMPprocessing at a desired elevation in the substrate. The polishing rate,therefore, should be controlled to provide accurate, reproducibleresults.

[0009] In certain applications, the polishing rate is a function of therelative velocity between the microelectronic substrate 12 and thepolishing pad 41. For example, where the carrier 30 and the substrate 12rotate relative to the polishing pad 41, the polishing rate may behigher toward the periphery of the substrate 12 than toward the centerof the substrate 12 because the relative linear velocity between therotating substrate 12 and the polishing pad 41 is higher toward theperiphery of the substrate 12. Where other methods are used to generaterelative motion between the substrate 12 and the planarizing medium 40,other portions of the substrate 12 may planarize at higher rates. In anycase, spatial non-uniformity in the polishing rate can reduce theoverall planarity of the substrate 12.

[0010] One conventional method for improving the uniformity of thepolishing rate across the face of the substrate 12 is to vary the normalforce (and therefore the frictional force) between the substrate 12 andthe polishing pad 41 to account for the different relative velocitiesbetween the two. For example, in one conventional arrangement shown inFIG. 2, a carrier 30 a can include a plurality of downward facing jets35 (shown schematically in FIG. 2) that can direct high pressure airthrough a small cavity 39 and against the backside of the substrate 12,pressing the substrate 12 against the polishing pad 41. In one aspect ofthis arrangement, selected jets 35 can be closed or opened to vary thenormal force applied to the substrate 12. For example, where it isdesirable to reduce the normal force applied toward the periphery of thesubstrate 12 (relative to the normal force applied to the center of thesubstrate 12), selected jets 35 aligned with the periphery of thesubstrate 12 can be closed. One drawback with this approach is that itmay be difficult and/or time consuming to change the number and/orlocation of the closed jets when the carrier 30 a planarizes differenttypes of substrates 12. A further drawback is that it may be difficultto accurately control the pressure applied by the jets because of theflow of gas from the jets 35 in the cavity 39 can be highly turbulentand unpredictable.

[0011] Another approach to varying the normal force applied to thesubstrate 12 is to use pressurized bladders, as shown in FIG. 3. Forexample, in one conventional approach, a carrier 30 b can include acentral bladder 36 a aligned with the central portion of the substrate12 and an annular peripheral bladder 36 b aligned with the periphery ofthe substrate 12. The carrier 30 b can also include an annular retainingring 37 that is biased against the polishing pad 41 by an annularretainer bladder 36 c. Each of the bladders 36 a-36 c is coupled with acorresponding conduit 38 a-38 c to a separately regulated pressuresource. Accordingly, the pressure applied to the central bladder 36 acan be increased relative to the pressure supplied to the peripheralbladder 36 b to increase the normal force at the center of the substrate12 and account for the lower relative velocity between the substrate 12and the polishing pad 41 near the center of the substrate 12. Onedrawback with this approach is that it can be cumbersome to coupleseveral different high pressure supply conduits to the rotating carrier30 b. Furthermore, it may be difficult to change the relative sizes ofthe bladders where it is desirable to change the relative sizes ofportions of the substrate 12 subjected to different pressures.

SUMMARY OF THE INVENTION

[0012] The present invention is directed towards methods and apparatusesfor planarizing microelectronic substrates. In one aspect of theinvention, the apparatus can include a carrier for supporting themicroelectronic substrate relative to a planarizing medium duringplanarization of the substrate. The carrier can include a support memberand a flexible, compressible membrane adjacent to the support member andhaving a first portion with a first thickness and a second portion witha second thickness greater than the first thickness. The first portionof the membrane can be aligned with a first part of the microelectronicsubstrate and the second portion can be aligned with a second part ofthe microelectronic substrate when the membrane engages themicroelectronic substrate. Accordingly, the second portion of themembrane can exert a greater normal force against the second part of themicroelectronic substrate than the first portion of the membrane exertsagainst the first part of the substrate.

[0013] In one aspect of the invention, the membrane can be inflated tobias it against the microelectronic substrate. Alternatively, themembrane can be biased by a flat support plate. In another aspect of theinvention, the thicker portion of the membrane can be aligned with acentral part of the microelectronic substrate and the thinner portion ofthe membrane can be aligned with a peripheral part of the substratepositioned radially outwardly from the central part. Alternatively, thepositions of the thicker and thinner portions of the membrane can bereversed. In any case, the membrane can include neoprene, silicone oranother compressible, flexible material and can be used in conjunctionwith a web-format planarizing machine or a circular platen planarizingmachine.

BRIEF DESCRIPTION OF THE DRAWINGS

[0014]FIG. 1 is a partially schematic, partial cross-sectional sideelevation view of a planarizing machine in accordance with the priorart.

[0015]FIG. 2 is a partially schematic, partial cross-sectional sideelevation view of a portion of another planarizing machine in accordancewith the prior art.

[0016]FIG. 3 is a partially schematic, partial cross-sectional sideelevation view of a portion of still another planarizing machine inaccordance with the prior art.

[0017]FIG. 4 is a partially schematic, partial cross-sectional sideelevation view of a planarizing machine having a carrier in accordancewith an embodiment of the invention.

[0018]FIG. 5 is a detailed cross-sectional side elevation view of aportion of the carrier shown in FIG. 4 positioned above amicroelectronic substrate.

[0019]FIG. 6 is a cross-sectional side elevation view of a portion of acarrier in accordance with another embodiment of the inventionpositioned above a microelectronic substrate.

[0020]FIG. 7 is an exploded cross-sectional side elevation view of aportion of a carrier in accordance with still another embodiment of theinvention.

[0021]FIG. 8 is a cross-sectional side elevation view of a portion of acarrier in accordance with yet another embodiment of the inventionpositioned above a substrate.

DETAILED DESCRIPTION OF THE INVENTION

[0022] The present disclosure describes methods and apparatuses formechanical and/or chemical-mechanical planarization of substrates usedin the fabrication of microelectronic devices. Many specific details ofcertain embodiments of the invention are set forth in the followingdescription and in FIGS. 4-8 to provide a thorough understanding of theembodiments described herein. One skilled in the art, however, willunderstand that the present invention may have additional embodiments,or that the invention may be practiced without several of the detailsdescribed in the following description.

[0023]FIG. 4 is a partially schematic, partial cross-sectional sideelevation view of a planarizing machine 100 having a carrier 130 thatpresses a substrate 112 against a planarizing medium 140 in accordancewith an embodiment of the invention. The substrate 112 can include asingle unit of semiconductor material, such as silicon, or asemiconductor material in combination with conductive materials,insulative materials, dielectric materials, and/or other materials thatare applied to the substrate during processing. The features andadvantages of the carrier 130 are best understood in the context of thestructure and the operation of the planarizing machine 100. Thus, thegeneral features of the planarizing machine 100 will be describedinitially.

[0024] The planarizing machine 100 is a web-format planarizing machinewith a support table 110 having a top-panel 111 at a workstation wherean operative portion “A” of the polishing pad 141 is positioned. Thetop-panel 111 is generally a rigid plate that provides a flat, solidsurface to which a particular section of the polishing pad 141 may besecured during planarization. The planarizing machine 100 also has aplurality of rollers to guide, position and hold the polishing pad 141over the top-panel 111. In one embodiment, the rollers include a supplyroller 121, first and second idler rollers 123 a and 123 b, first andsecond guide rollers 124 a and 124 b and a take-up roller 127. Thesupply roller 121 carries an unused or pre-operative portion of thepolishing pad 141 and the take-up roller 127 carries a used orpost-operative portion of the polishing pad 141. Additionally, the firstidler roller 123 a and the first guide roller 124 a stretch thepolishing pad 141 over the top-panel 111 to hold the polishing pad 141stationary during operation. A motor (not shown) drives the take-uproller 127 and can also drive the supply roller 121 to sequentiallyadvance the polishing pad 141 across the top-panel 111. Accordingly,clean post-operative sections of the polishing pad 141 may be quicklysubstituted for worn sections to provide a consistent surface forplanarizing and/or cleaning the substrate 112.

[0025] The carrier assembly 130 translates and/or rotates the substrate112 across the polishing pad 141. In one embodiment, the carrierassembly 130 has a substrate holder or support 131 to hold the substrate112 during planarization. The carrier assembly 130 can also have asupport gantry 135 carrying a drive assembly 134 that translates alongthe gantry 135. The drive assembly 134 generally has an actuator 136, adrive shaft 137 coupled to the actuator 136, and an arm 138 projectingfrom the drive shaft 137. The arm 138 carries the substrate holder 131via a terminal shaft 139. In another embodiment, the drive assembly 134can also have another actuator (not shown) to rotate the terminal shaft139 and the substrate holder 131 about an axis C-C as the actuator 136orbits the substrate holder 131 about the axis B-B. One suitableplanarizing machine without the polishing pad 141 and the planarizingliquid 143 is manufactured by Obsidian, Incorporated of Fremont, Calif.In light of the embodiments of the planarizing machine 100 discussedabove, a specific embodiment of the carrier assembly 130 will now bedescribed in more detail.

[0026]FIG. 5 is a detailed cross-sectional side elevation view of thesubstrate holder 131 shown in FIG. 4 positioned above the substrate 112.The substrate holder 131 can include a membrane 150 having a generallycircular planform shape that bears against an upper surface 113 of thesubstrate 112 to prevent the substrate 112 from moving relative to thesubstrate holder 131. In one aspect of this embodiment, the membrane 150can include a resilient, flexible material, such as neoprene orsilicone, that compresses as the substrate holder 131 moves downwardlyagainst the substrate 112. Alternatively, the membrane 150 can includeother resilient, flexible, compressible materials suitable for contactwith the substrate 112 and the planarizing liquid 143 (FIG. 4). In anycase, the membrane 150 can have one portion that is thicker than anotherto apply different normal forces to different portions of the substrate112. For example, the membrane 150 can have a central portion 152 thatis thicker than a concentric, annular peripheral portion 151 locatedradially outwardly from the central portion 152. Accordingly, when thesubstrate holder 131 engages the substrate 112, the central portion 152compresses by a greater amount than the peripheral portion 151 andexerts a greater downward force on a central part 114 of the substrate112 than on an annular peripheral part 115 of the substrate 112.

[0027] As the substrate 112 and the substrate holder 131 rotate togetherrelative to the polishing pad 141 (FIG. 4), the greater downward forceapplied to the central part 114 of the substrate 112 can locallyincrease the frictional forces between the substrate 112 and thepolishing pad 141, and can reduce or eliminate any disparity between theremoval rate of material from the central part 114 and the peripheralpart 115 of the substrate 112. Such disparities can occur where theperipheral part 115 has a greater linear velocity relative to thepolishing pad 141 than does the central part 114.

[0028] In one embodiment, the peripheral portion 151 of the membrane 150can have a thickness of approximately 0.030 inches and the centralportion 152 of the membrane 150 can have a thickness greater than about0.030 inches and less than about 0.060 inches. In one aspect of thisembodiment, the thickness of the membrane can vary in a generallycontinuous manner between the two portions. In other embodiments,portions of the membrane 150 can have other thicknesses, depending onthe compressibility of the material forming the membrane 150 and thenormal force selected to be applied to each portion of the substrate112. The membrane can also have different thickness profiles, forexample, a step change in thickness between the two portions, or aseries of step changes between the periphery and the center of themembrane 150.

[0029] In one embodiment, the membrane 150 can include a single piece ofcompressible material injection molded or otherwise formed to have thecross-sectional shape shown in FIG. 5 and positioned loosely against alower surface 160 of the substrate holder 131. As the substrate holder131 biases the membrane 150 against the substrate 112, frictional forcesbetween the lower surface 160 and the membrane 150, and between themembrane 150 and the substrate 112 can prevent these components fromrotating relative to each other. Alternatively, other methods can beused to couple the membrane 150 to the substrate holder 131 and/orcouple the substrate 112 to the membrane 150. For example, the substrateholder 131 can have holes 161 in the lower surface 160 that are coupledvia a conduit 138 to a vacuum source for drawing the membrane 150against the substrate holder 131 under a vacuum force. In another aspectof this embodiment, the membrane 150 can include perforations 156 thatextend through the membrane 150 and are in fluid communication with thevacuum source to draw the substrate 112 against the membrane 150.Accordingly, the substrate 112 can remain engaged with the substrateholder 131 as the substrate holder 131 is lifted from the polishing pad141.

[0030] One feature of the substrate holder 131 discussed above withreference to FIGS. 4 and 5 is that the membrane 150 can apply adifferent normal force to one portion of the substrate 112 than toanother. Accordingly, the substrate holder 131 and the membrane 150 canplanarize the entire substrate 112 at a more uniform rate bycompensating for other effects (such as one portion of the substrate 112having a different linear velocity than another portion) that mightotherwise lead to a non-uniform planarizing rate. For example, thecentral portion 152 of the substrate 112 can planarize at approximatelythe same rate as the peripheral portion 151. An advantage of thisfeature is that the membrane 150 can apply differential normal forceswithout requiring complex rotating air supply arrangements, as is thecase with some conventional systems. Another advantage is that themembrane 150 can be easily exchanged for another membrane to change thenormal force distribution applied to the substrate 112. For example, amembrane 150 having one ratio of central portion thickness to peripheralportion thickness can be exchanged for another membrane having adifferent ratio to more effectively planarize a different substrate 112having different surface characteristics, such as a softer peripheralpart 115 and/or a harder central part 114.

[0031]FIG. 6 is a cross-sectional side elevation view of a substrateholder 231 having a membrane 250 in accordance with another embodimentof the invention. The membrane 250 includes a peripheral portion 251having a thickness greater than that of a central portion 252.Accordingly, the membrane 250 will tend to exert a greater force on theperipheral part 115 of the substrate 112 than on the central part 114.This embodiment may be suitable for planarizing microelectronicsubstrates 112 having features toward the periphery thereof that requirea higher planarizing rate than can be achieved by the higher linearvelocity at the periphery.

[0032] As shown in FIG. 6, the membrane 250 can include two plies 253 ofcompressible material, shown as an upper ply 253 a and a lower ply 253b. The upper ply 253 a can have a generally circular shape and the lowerply 253 b can have a generally annular shape with a central opening. Thetwo plies 253 can be attached using conventional adhesives. In oneembodiment, the materials forming both plies 253 can be identical.Alternatively, the lower ply 253 b can include a different material thanthe upper ply 253 a, providing another method (in addition to varyingthe membrane thickness) for locally changing the normal force applied bythe membrane 250.

[0033]FIG. 7 is an exploded cross-sectional side elevation view of asubstrate holder 331 having a membrane 350 coupled to a retainerassembly 370 in accordance with another embodiment of the invention. Theretainer assembly 370 can include a support plate 371 and a retainerring 372 that removably clamps the membrane 350 to the support plate371. The retainer assembly 370 then fits against a lower surface 360 ofthe substrate holder 331. The support plate 371 can have an uppersurface 374 and a lower surface 375 facing opposite the upper surface374. The support plate 371 can include a plurality of threaded apertures376 (two of which are visible in FIG. 7) adjacent the outer edge ofupper surface 374. The retainer ring 372 can have non-threaded apertures377 aligned with the threaded apertures 376 of the support plate 371.

[0034] The membrane 350 can have a central portion 352, a peripheralportion 351, and an overlapping attachment portion 354 that extends overthe peripheral portion 351. The attachment portion 354 can be spacedapart from the peripheral portion 351 by a distance approximately equalto the thickness of the support plate 371. Accordingly, the membrane 350can be secured to the retainer assembly 370 by positioning theattachment portion 354 of the membrane 350 adjacent the upper surface374 of the support plate 371, and positioning the peripheral portion 351and central portion 352 of the membrane 350 adjacent the lower surface375 of the support plate 371. The retainer ring 372 is then positionedon the attachment portion 354 and fasteners 373 extend through theapertures 377 of the retainer ring 372, through holes 355 of theattachment portion 354 and into the threaded apertures 376 of thesupport plate 371, clamping the membrane 350 between the retaining ring372 and the support plate 371.

[0035] In one aspect of the embodiment shown in FIG. 7, the centralportion 352 can bulge upwardly before the membrane 350 is mounted to theretainer assembly 370 and bulge downwardly after the membrane 350 hasbeen mounted to the support plate 371. Alternatively, the centralportion 352 can bulge downwardly before the membrane 350 is mounted tothe retainer assembly 370, in a manner generally similar to that shownin FIG. 5. In another alternate arrangement, the central portion 352 canbe thinner than the peripheral portion 351, in a manner generallysimilar to that shown in FIG. 6.

[0036]FIG. 8 is a cross-sectional side elevation view of a substrateholder 431 having an inflatable membrane 450 in accordance with stillanother embodiment of the invention. In one aspect of this embodiment,the inflatable membrane 450 can have a central portion 452 that isthicker than a peripheral portion 451. The membrane 450 can be attachedto a retainer assembly 470 having a support plate 471 and a retainerring 472 in a manner generally similar to that discussed above withreference to the membrane 350 and the retainer assembly 370 shown inFIG. 7.

[0037] In one aspect of this embodiment, an air supply conduit 438extends through a lower surface 460 of the substrate holder 431 and iscoupled to a source of compressed air (not shown). The support plate 471can include a corresponding air supply passage 478 that extends throughthe support plate 471 and is in fluid communication with the air supplyconduit 438. When air (or another gas) is supplied through the airsupply conduit 438 and the air supply passage 478, the membrane 450 willtend to inflate, increasing the normal force applied to the substrate112. The increased normal force will be greater at the central part 114of the substrate 112 than at the peripheral part 115 due to theincreased thickness of the membrane 450 at the central portion 452thereof.

[0038] From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. For example, the membrane canhave non-circular planform shapes and the thick and thin regions of themembrane need not be concentric or annular. The substrate holder can beused with a web-format planarizing machine of the type shown in FIG. 4,or a circular platen planarizing machine of the type shown in FIG. 1.Accordingly, the invention is not limited except as by the appendedclaims.

1. A carrier for supporting a microelectronic substrate relative to aplanarizing medium during planarization of the microelectronicsubstrate, the carrier comprising: a support member; and a flexible,compressible membrane adjacent to the support member, the membranehaving a first portion with a first thickness and a second portion witha second thickness greater than the first thickness, the first portionof the membrane being aligned with a first part of the microelectronicsubstrate when the membrane engages the microelectronic substrate, thesecond portion of the membrane being aligned with a second part of themicroelectronic substrate when the membrane engages the microelectronicsubstrate.
 2. The carrier of claim 1 , further comprising a retainercoupled to the membrane and positioned at least partially between themembrane and the support member to at least restrict motion of themembrane relative to the support member.
 3. The carrier of claim 1wherein the membrane and at least a portion of the support member definean at least approximately gas tight volume and the membrane isinflatable from a collapsed position to an inflated position with atleast part of the membrane spaced apart from the support member when themembrane is in the inflated position.
 4. The carrier of claim 1 whereinthe membrane has a first surface facing, a generally flat surface of thesupport member and a second surface facing, opposite the first surfacetoward the microelectronic substrate when the membrane engages themicroelectronic substrate, the first surface being, generally in directcontact with the flat surface of the support member.
 5. The carrier ofclaim 1 wherein the membrane has a generally circular planform shape andthe first and second portions of the membrane are annular with the firstportion disposed radially inwardly from the second portion.
 6. Thecarrier of claim 5 wherein the first and second portions of the membraneare concentric.
 7. The carrier of claim 1 wherein the membrane has agenerally circular planform shape and the first and second portions areannular with the second portion disposed radially inwardly from thefirst portion.
 8. The carrier of claim 1 wherein the membrane includes amembrane material and the membrane is formed by injecting the membranematerial into a mold.
 9. The carrier of claim 1 wherein the membraneincludes at least one of neoprene and silicone.
 10. The carrier of claim1 wherein the first thickness of the membrane is approximately 0.030inches.
 11. The carrier of claim 1 wherein a ratio of the secondthickness of the membrane to the first thickness of the membrane is lessthan approximately two.
 12. The carrier of claim 1 wherein the first andsecond portions are adjacent to each other.
 13. The apparatus of claim 1wherein the first and second portions of the membrane are radiallydisposed relative to each other and an intermediate thickness of themembrane varies in a generally continuous manner between the firstthickness and the second thickness.
 14. A carrier for supporting amicroelectronic substrate relative to a planarizing medium duringplanarization of the microelectronic substrate, the carrier comprising:a support member; a flexible, compressible membrane having a firstportion with a first thickness and a second portion with a secondthickness greater than the first thickness, the first portion beingaligned with a first part of the microelectronic substrate when themembrane engages the microelectronic substrate, the second portion beingaligned with a second part of the microelectronic substrate when themembrane engages the microelectronic substrate; and a retainer engagedwith the support member and the membrane to at least restrict motion ofthe membrane relative to the support member.
 15. The carrier of claim 14wherein the support member and the membrane each have a generallycircular planform shape.
 16. The carrier of claim 14 wherein theretainer has a generally circular planform shape.
 17. The carrier ofclaim 14 wherein the membrane has a generally circular planform shapeand the first and second portions are annular with the first portiondisposed radially inwardly from the second portion.
 18. The carrier ofclaim 14 wherein the membrane has a generally circular planform shapeand the first and second portions are annular with the second portiondisposed radially inwardly from the first portion.
 19. The carrier ofclaim 14 wherein the retainer includes a support plate and a retainerring releasably coupled to the support plate with threaded screws,further wherein at least a portion of the membrane is clamped betweenthe support plate and the retainer ring.
 20. The carrier of claim 14wherein retainer forms an at least partially gas tight seal with themembrane and the membrane is inflatable from a collapsed position to aninflated position with at least part of the membrane being spaced apartfrom the retainer when the membrane is in the inflated position.
 21. Thecarrier of claim 14 wherein the membrane has a first surface facing agenerally flat surface of the retainer and a second surface facingopposite the first surface toward the microelectronic substrate when themembrane engages the microelectronic substrate, the first surface beinggenerally in direct contact with the flat surface of the retainer. 22.The carrier of claim 14 wherein the membrane includes at least one ofneoprene and silicone.
 23. The carrier of claim 14 wherein the membraneis a first membrane with a ratio of the first thickness to the secondthickness having a first value, further comprising a second membraneconfigured to be engaged with the retainer in place of the firstmembrane, the second membrane having a first portion with a firstthickness and a second portion with a second thickness different thanthe first thickness, a ratio of the first thickness of the secondmembrane to the second thickness of the second membrane having a secondvalue different than the first value.
 24. The carrier of claim 14wherein the first and second portions of the membrane are radiallydisposed relative to each other and an intermediate thickness of themembrane varies in a generally continuous manner between the firstthickness and the second thickness.
 25. An apparatus for planarizing amicroelectronic substrate, comprising: a planarizing medium support; aplanarizing medium supported by the planarizing medium support; asubstrate carrier positioned proximate to the planarizing medium, thesubstrate carrier including a flexible, compressible membrane having afirst portion with a first thickness and a second portion with a secondthickness different than the first thickness, the first portion beingaligned with a first part of the microelectronic substrate when themembrane engages the microelectronic substrate, the second portion beingaligned with a second part of the microelectronic substrate when themembrane engages the microelectronic substrate.
 26. The apparatus ofclaim 25 wherein the planarizing medium includes a polishing pad havinga generally circular planform shape and the planarizing medium has acorresponding circular planform shape.
 27. The apparatus of claim 25wherein the planarizing medium includes an elongated polishing pad atleast partially wound on a supply roller and extending from the supplyroller across the planarizing medium support to a take-up roller. 28.The apparatus of claim 25 , further comprising an actuator coupled tothe substrate carrier to bias the substrate carrier toward theplanarizing medium.
 29. The apparatus of claim 25 , further comprisingan actuator coupled to the substrate carrier to move the substratecarrier relative to the planarizing medium in a plane generally parallelto a plane of the planarizing medium.
 30. The apparatus of claim 25wherein the substrate carrier includes a support member and a retainerengaged with the support member, the retainer being coupled to themembrane to at least restrict motion of the membrane relative to thesupport member.
 31. The apparatus of claim 25 wherein the membrane and aportion of the substrate carrier define an at least approximately gastight volume with the membrane being inflatable from a first position toa second position, at least part of the membrane being spaced apart fromthe portion of the substrate carrier when the membrane is in the secondposition.
 32. The apparatus of claim 25 wherein the membrane has a firstsurface facing a generally flat surface of the substrate carrier and asecond surface facing opposite the first surface toward themicroelectronic substrate when the membrane engages the microelectronicsubstrate, the first surface being generally in direct contact with theflat surface of the substrate carrier.
 33. The apparatus of claim 25wherein the membrane has a generally circular planform shape and thefirst and second portions are annular with the first portion disposedradially inwardly from the second portion.
 34. The apparatus of claim 25wherein the membrane has a generally circular planform shape and thefirst and second portions are annular with the second portion disposedradially inwardly from the first portion.
 35. The apparatus of claim 25wherein the first and second portions of the membrane are radiallydisposed relative to each other and as intermediate thickness of themembrane varies in a generally continuous manner between the firstthickness and the second thickness.
 36. The apparatus of claim 25wherein the substrate carrier is a first substrate carrier and themembrane is a first membrane with a ratio of the first thickness to thesecond thickness having a first value, further comprising a secondsubstrate carrier with a second membrane having a first portion with afirst thickness and a second portion with a second thickness differentthan the first thickness, a ratio of the first thickness of the secondmembrane to the second thickness of the second membrane having a secondvalue different than the first value.
 37. A method for planarizing amicroelectronic substrate, comprising: biasing the microelectronicsubstrate against a planarizing medium with a flexible membrane to exerta first force on a first part of the microelectronic substrate and exerta second force greater than the first force on a second part of themicroelectronic substrate; and moving at least one of themicroelectronic substrate and the planarizing medium relative to theother to remove material from the microelectronic substrate.
 38. Themethod of claim 37 , further comprising: engaging the first part of themicroelectronic substrate with a first portion of the flexible membranehaving a first thickness; engaging the second part of themicroelectronic substrate with a second portion of the flexible membranehaving a second thickness greater than the first thickness.
 39. Themethod of claim 38 wherein engaging a first part of the microelectronicsubstrate includes engaging a first annular part of the microelectronicsubstrate and engaging the second part of the microelectronic substrateincludes engaging a second annular part of the microelectronic substratedisposed radially inwardly from the first annular part of themicroelectronic substrate.
 40. The method of claim 39 wherein engaging afirst part of the microelectronic substrate includes engaging a firstannular part of the microelectronic substrate and engaging the secondpart of the microelectronic substrate includes engaging a second annularpart of the microelectronic substrate disposed radially outwardly fromthe first annular part of the microelectronic substrate.
 41. The methodof claim 37 wherein biasing the microelectronic substrate against theplanarizing medium includes inflating the membrane.
 42. The method ofclaim 37 wherein the membrane has a first surface facing toward themicroelectronic substrate and a second surface facing generally oppositethe first surface, further wherein biasing the microelectronic substrateagainst the planarizing medium includes biasing a generally flat supportmember against the second surface of the membrane.
 43. The method ofclaim 37 wherein biasing the microelectronic substrate against aplanarizing medium includes biasing the microelectronic substrateagainst a first portion of a polishing pad, further wherein moving theat least one of the microelectronic substrate and the planarizing mediumincludes advancing the polishing pad from a supply roller to a take-uproller to engage a second portion of the polishing pad with the firstand second parts of the microelectronic substrate
 44. The method ofclaim 37 , further comprising forming the membrane by disposing amembrane material in a mold.
 45. The method of claim 37 , furthercomprising forming the membrane by providing a first ply of a membranematerial at the first and second portions of the membrane and attachinga second ply of the membrane material to the first ply at the secondportion of the membrane.
 46. The method of claim 37 wherein moving atleast one of the microelectronic substrate and the planarizing mediumrelative to the other includes moving the first part of themicroelectronic substrate and the planarizing medium at a first linearvelocity relative to each other and moving the second part of themicroelectronic substrate and the planarizing medium at a second linearvelocity relative to each other, further wherein removing material fromthe microelectronic substrate includes removing material from the firstpart of the microelectronic substrate at a first rate and removingmaterial from the second part of the microelectronic substrate at asecond rate approximately the same as the first rate.
 47. The method ofclaim 37 wherein the membrane is the first of a first and secondmembrane, each membrane having a first portion with a first thicknessand a second portion with a second thickness, a ratio of the firstthickness to the second thickness of the first membrane having a firstvalue, a ratio of the first thickness to the second thickness of thesecond membrane having a second value different than the first value,further comprising selecting the first membrane from the first andsecond membranes.
 48. A method for planarizing a microelectronicsubstrate, comprising: biasing a first annular part of themicroelectronic substrate against a planarizing medium with a firstforce by engaging the first annular part with a first portion of aflexible membrane having a first thickness; biasing a second annularpart of the microelectronic substrate against the planarizing mediumwith a second force greater than the first force by engaging the secondannular part with a second portion of the flexible membrane having asecond thickness greater than the first thickness; and moving at leastone of the microelectronic substrate and the planarizing medium relativeto the other to remove material from the microelectronic substrate. 49.The method of claim 48 wherein biasing the microelectronic substrateagainst the planarizing medium includes inflating the membrane.
 50. Themethod of claim 48 wherein the membrane has a first surface facingtoward the microelectronic substrate and a second surface facinggenerally opposite the first surface, further wherein biasing themicroelectronic substrate against the planarizing medium includesbiasing a generally flat support member against the second surface ofthe membrane.
 51. The method of claim 48 wherein biasing themicroelectronic substrate against a planarizing medium includes biasingthe microelectronic substrate against a first portion of a polishingpad, further wherein moving the at least one of the microelectronicsubstrate and the planarizing medium includes advancing the polishingpad from a supply roller to a take-up roller to engage a second portionof the polishing pad with the first and second parts of themicroelectronic substrate
 52. The method of claim 48 wherein moving atleast one of the microelectronic substrate and the planarizing mediumrelative to the other includes moving the first part of themicroelectronic substrate and the planarizing medium at a first linearvelocity relative to each other and moving the second part of themicroelectronic substrate and the planarizing medium at a second linearvelocity relative to each other, further wherein removing material fromthe microelectronic substrate includes removing material from the firstpart of the microelectronic substrate at a first rate and removingmaterial from the second part of the microelectronic substrate at asecond rate approximately the same as the first rate.
 53. The method ofclaim 48 wherein the membrane is the first of a first and secondmembrane, each membrane having a first portion with a first thicknessand a second portion with a second thickness, a ratio of the firstthickness to the second thickness of the first membrane having a firstvalue, a ratio of the first thickness to the second thickness of thesecond membrane having a second value different than the first value,further comprising selecting the first membrane from the first andsecond membranes.
 54. A method for removing material from amicroelectronic substrate, comprising: engaging the microelectronicsubstrate with a planarizing medium; moving at least one of a first partof the microelectronic substrate and the planarizing medium relative tothe other at a first rate; moving at least one of a second part of themicroelectronic substrate and the planarizing medium relative to theother at a second rate less than the first rate; removing material fromthe first and second parts of the microelectronic substrate atapproximately equal rates by biasing the first part of themicroelectronic substrate against the planarizing medium with a firstmembrane portion having a first thickness and biasing the second part ofthe microelectronic substrate against the planarizing medium with asecond membrane portion having a second thickness greater than the firstthickness.
 55. The method of claim 54 wherein engaging themicroelectronic substrate with the planarizing medium includes engagingthe microelectronic substrate with a polishing pad.
 56. The method ofclaim 54 wherein moving at least one of the first part of themicroelectronic substrate and the planarizing medium includes moving atleast one of a first annular part of the microelectronic substrate andthe planarizing medium, further wherein moving at least one of thesecond part of the microelectronic substrate and the planarizing mediumincludes moving at least one of the planarizing medium and a secondannular part of the microelectronic substrate positioned radiallyinwardly from the first annular part of the microelectronic substrate.57. The method of claim 54 wherein biasing the microelectronic substrateagainst the planarizing medium includes inflating the membrane.
 58. Themethod of claim 54 wherein the membrane has a first surface facingtoward the microelectronic substrate and a second surface facinggenerally opposite the first surface, further wherein biasing themicroelectronic substrate against the planarizing medium includesbiasing a generally flat support member against the second surface ofthe membrane.
 59. The method of claim 54 wherein biasing themicroelectronic substrate against a planarizing medium includes biasingthe microelectronic substrate against a first portion of a polishingpad, further wherein moving the at least one of the microelectronicsubstrate and the planarizing medium includes advancing the polishingpad from a supply roller to a take-up roller to engage a second portionof the polishing pad with the first and second parts of themicroelectronic substrate.